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 Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer TO-126 (SOT-32) Plastic Package
IS/ISO 9002 Lic# QSC/L- 000019.2
IS / IECQC 700000 IS / IECQC 750100
BD136, BD138, BD140
BD136, 138, 140
PNP PLASTIC POWER TRANSISTORS
Complementary BD135, 137, 139 Medium Power Linear and Switching Applications
PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE
1
2 3
ALL DIMENSIONS IN MM
ABSOLUTE MAXIMUM RATINGS Collector-base voltage (open emitter) Collector-emitter voltage (open base) Collector current Total power dissipation up to TC = 25C Junction temperature Collector-emitter saturation voltage IC = 0.5 A; IB = 0.05 A D.C. current gain IC = 0.15 A; VCE = 2 V VCBO VCEO IC Ptot Tj VCEsat hFE max. max. max. max. max. max. min. max. 136 45 45 136 45 45 138 140 60 100 60 80 1.5 12.5 150 0.5 40 250 138 60 60 5.0 140 100 80 V V A W C V
RATINGS (at T A=25C unless otherwise specified) Limiting values Collector-base voltage (open emitter) VCBO Collector-emitter voltage (open base) VCEO Emitter-base voltage (open collector) VEBO
max. max. max.
V V V
Continental Device India Limited
Data Sheet
Page 1 of 3
BD136, BD138, BD140
Collector current Base current Total power dissipation up to TA = 25C Derate above 25C Total power dissipation up to TC = 25C Derate above 25C Junction temperature Storage temperature THERMAL RESISTANCE From junction to case From junction to ambient CHARACTERISTICS T amb = 25C unless otherwise specified Collector cutoff current IE = 0; VCB = 30 V IE = 0; VCB = 30 V; T C = 125C Emitter cut-off current IC = 0; VEB = 5 V Breakdown voltages IC = 0.03 A; IB = 0 IC = 1 mA; I E = 0 IE = 1 mA; IC = 0 Saturation voltage IC = 0.5 A; IB = 0.05 A Base-emitter on voltage IC = 0.5A; V CE = 2V D.C. current gain IC = 0.005 A; VCE = 2 V* IC = 0.15 A; VCE = 2 V** IC = 0.5 A; V CE = 2 V* ** hFE classification:
IC IB Ptot Ptot Tj Tstg Rth jc Rth ja
max. max. max. max max. max max.
1.5 0.5 1.25 10 12.5 100 150 -65 to +150 10 100
A A W mW/C W m /C W C C C/W C/W
136 ICBO ICBO IEBO VCEO(sus) * VCBO VEBO VCEsat * VBE(on)* hFE* hFE* hFE* -6 -10 -16 -25 max. max. max. min. min. min. max. max. min. min. max. min. min. 40 max. 100 min. 63 max. 160 min. 100 max. 250 min. 160 max. 400 45 45
138 0.1 10 10 60 60 5.0 0.5 1.0 25 40 250 25
140 A A A 80 100 V V V V V
* Pulse test: pulse width 300 s, duty cycle 2%.
Continental Device India Limited
Data Sheet
Page 2 of 3
Notes
Disclaimer
The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s). CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice.
CDIL is a registered Trademark of
Continental Device India Limited
C-120 Naraina Industrial Area, New Delhi 110 028, India. Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290 e-mail sales@cdil.com www.cdil.com
Continental Device India Limited Data Sheet Page 3 of 3


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